LabAdviser/Technology Research/Organic Ice Resists for Electron-Beam Lithography - Instrumentation and Processes/Electron-Beam Lithography on Organic Ice Resists: Difference between revisions
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==Diamond Nanofabrication== | ==Diamond Nanofabrication== | ||
[[File:Diamond_OIR.png|400px]] | |||
We defined OIR patterns onto diamond chips as small as 2x2 mm2 to be used as etch mask. OIR layers of well-controlled thickness can be deposited on the entire sample surface, regardless of the shape and sharp corners of the diamond chip, and the one-step lithography reduces manipulating these small samples to a minimum. | |||
To obtain a deeper etch, diamond chips were coated with 10 nm ALD Al2O3 to act as a hard mask, and then a OIR was deposited and patterned. | |||
Due to the insulating nature of diamond, localized charging was occasionally observed, resulting in distortion and displacement of the desired layout in denser exposure areas. A thin Al layer was added on top of the sample to ground it through the SEM clip, which solved the issue without affecting the following etch steps. | |||