Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide: Difference between revisions

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-!
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 ![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]]
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+![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]].
-*
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 *Atomic Layer Deposition
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+*(Plasma enhanced) Atomic Layer Deposition
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 !Stoichiometry
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-*HfO2
+*HfO<sub>2</sub>
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-*
+*HfO<sub>2</sub>
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 !Film Thickness
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-* 0 nm - 50 nm
+*0 nm - 100 nm
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-*
+*0 nm - 50 nm
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 !Deposition rate
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-* 0.0827 nm/cycle on a flat sample
+* At 150 <sup>o</sup>C: 0.11 nm/cycle
-* 0.954-0.122 nm/cycle on a high aspect ratio structures
+* At 250 <sup>o</sup>C: 0.0827 nm/cycle
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-*
+* At 250 <sup>o</sup>C: 0.0804 nm/cycle
+* At 250 <sup>o</sup>C on trenches: 0.954-1.22 nm/cycle
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 !Step coverage
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+*Very good.
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 *Very good
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-*
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-!Process Temperature
+!Temperature window
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-* 150 - 300<sup>o</sup>C
+*150 <sup>o</sup>C - 300 <sup>o</sup>C
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-*
+*150 <sup>o</sup>C - 300 <sup>o</sup>C
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 !Substrate size
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-*Several small samples
+*1-5 100 mm wafers (only good uniformity for the top wafer)
-*1-5 50 mm wafers
+*1-5 150 mm wafer (only good uniformity for the top wafer)
-*1-5 100 mm wafers
+*1 200 mm wafer
-*1-5 150 mm wafer
+*Several smaller samples
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-*
+*1 100 mm wafer
+*1 150 mm wafer
+*1 200 mm wafer
+*Several smaller samples
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 *Silicon oxide, silicon nitride
 *Quartz/fused silica
-*Al, Al<sub>2</sub>O<sub>3</sub>
+*Metals (use dedicated carrier wafer)
-*Ti, TiO<sub>2</sub>
-*Other metals (use dedicated carrier wafer)
 *III-V materials (use dedicated carrier wafer)
 *Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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-*
+*Silicon
+*Silicon oxide, silicon nitride
+*Quartz/fused silica
+*Metals (use dedicated carrier wafer)
+*III-V materials (use dedicated carrier wafer)
+*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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