Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide: Difference between revisions

More information about hafnium oxide deposition can be found here: for [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].

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![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD]]

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*HfO2

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* 0 nm - 50 nm  

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* 0.0827 nm/cycle on a flat sample

* 0.954-0.122 nm/cycle on a high aspect ratio structures

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*Very good

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* 150 - 300^oC

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*1-5 100 mm wafers

*1-5 150 mm wafer

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*III-V materials (use dedicated carrier wafer)

*Polymers (depending on the melting point/deposition temperature, use carrier wafer)

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