Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions
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*[[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_2|Plasma asher 2]] | *[[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_2|Plasma asher 2]] | ||
Revision as of 15:14, 7 May 2018
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Etching of Polymer
Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controlled etch of the polymer is needed a plasma system is used instead. Plasma ashers are designed for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.
Comparison of methods for polymer etching
ASE | Plasma asher 1 | Plasma asher 2 | Wet Polymer stripping | |
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General description | The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching. | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals. | Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks. |
Etch direction |
Process dependent: |
Isotropic |
Isotropic |
Dissolves the polymer |
Possible etch reactants |
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Substrate size |
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Allowed materials |
Silicon wafers with layers of
Polymer wafers? |
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