Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions
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![[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_1|Plasma asher 1]] | ![[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_1|Plasma asher 1]] | ||
![[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_2|Plasma asher 2]] | ![[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_2|Plasma asher 2]] | ||
!Wet Polymer stripping | !Wet Polymer stripping | ||
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|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. | |The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. | ||
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals. | |The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals. | ||
|Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks. | |Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks. | ||
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Isotropic | Isotropic | ||
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Dissolves the polymer | Dissolves the polymer | ||
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*Oxygen plasma | *Oxygen plasma | ||
*Oxygen plasma mixed with | *Oxygen plasma mixed with | ||
**SF<sub>6</sub> | **SF<sub>6</sub> | ||
**CF<sub>4</sub> | |||
**Ar | **Ar | ||
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*Oxygen plasma | *Oxygen plasma | ||
*Oxygen plasma mixed with | *Oxygen plasma mixed with | ||
**N<sub>2</sub> | **N<sub>2</sub> | ||
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*<nowiki>#</nowiki>25 100 mm wafers | *<nowiki>#</nowiki>25 100 mm wafers | ||
*<nowiki>#</nowiki>25 150 mm wafers | *<nowiki>#</nowiki>25 150 mm wafers | ||
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*Any sample # and size that can go into the beaker used. | *Any sample # and size that can go into the beaker used. | ||
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*Aluminium | *Aluminium | ||
*Polymers (list?) | *Polymers (list?) | ||
Quartz/fused silica wafers | *Quartz/fused silica wafers | ||
*Metals (no Pb and Te) max 5% wafer coverage | |||
Polymer wafers? | Polymer wafers? | ||
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*Glass | *Glass | ||
*Resists, polymers | *Resists, polymers | ||
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*Any material that may go into the beaker used. | *Any material that may go into the beaker used. |
Revision as of 15:13, 7 May 2018
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Etching of Polymer
Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controlled etch of the polymer is needed a plasma system is used instead. Plasma ashers are designed for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.
Comparison of methods for polymer etching
ASE | Plasma asher 1 | Plasma asher 2 | Wet Polymer stripping | |
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General description | The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching. | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals. | Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks. |
Etch direction |
Process dependent: |
Isotropic |
Isotropic |
Dissolves the polymer |
Possible etch reactants |
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Substrate size |
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Allowed materials |
Silicon wafers with layers of
Polymer wafers? |
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