Specific Process Knowledge/Etch/KOH Etch/ProcessInfo: Difference between revisions
| Line 77: | Line 77: | ||
<math>W_b = W_o - 2lcot(54.7^o) = W_o - \sqrt{2} l</math> | <math>W_b = W_o - 2lcot(54.7^o) = W_o - \sqrt{2} l</math> | ||
<br clear="all" /> | |||
===Definition of <110> alignment structures=== | |||
The etch rate dependence on the crystallographic planes can be used to determine the <110> crystal directions with high precision (better than +/- 0.05 <sup>o</sup>). A fast method for doing this, using the symmetric under-etching behavior around but not at the <110>-directions, was described by Vangbo and Bäcklund in J. Micromech. Microeng.'''6''' (1996), 279-284. High-precision control of the <110>-direction during alignment can be necessary in order to control the dimensions of KOH-etched structures (e.g. precise control of V-groove dimensions). A dedicated mask (MASK NAME) has been designed for this purpose. | |||
<br clear="all" /> | <br clear="all" /> | ||