Specific Process Knowledge/Lithography/EBeamLithographyManual: Difference between revisions
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*Electron-beam scanning speeds, f, up to 100 MHz are available (which is maximum scan speed). | *Electron-beam scanning speeds, f, up to 100 MHz are available (which is maximum scan speed). | ||
*The acceleration voltage is 100 kV. | *The acceleration voltage is 100 kV. | ||
*The e-beam writer can pattern structures with a minimum resolution of | *The e-beam writer can pattern structures with a minimum reproducible resolution of 7 nm, depending on the resist type. | ||
*The maximum field-size without stitching is 1000µm x 1000µm. | *The maximum field-size without stitching is 1000µm x 1000µm. | ||
*The machine has cassettes that can contain either 6 wafers of 2” in size, 2 or 3 wafers of 4” in size, 1 wafer of 6” in size, 1 wafer of 8” in size, 4 chips of different sizes(slot sizes 4 mm, 8 mm, 12 mm, and 20 mm) | *The machine has cassettes that can contain either 6 wafers of 2” in size, 2 or 3 wafers of 4” in size, 1 wafer of 6” in size, 1 wafer of 8” in size, 4 chips of different sizes(slot sizes 4 mm, 8 mm, 12 mm, and 20 mm) | ||