Specific Process Knowledge/Doping: Difference between revisions
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*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in | *[[Specific Process Knowledge/Thermal Process/Dope with Boron|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in | ||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous | *[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous | ||
*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) | *[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG) | ||
*Ion implantation (not possible at Danchip) | *Ion implantation (not possible at Danchip) | ||