Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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*Boronfloat and quartz: ~3-4 μm/min | *Boronfloat and quartz: ~3-4 μm/min | ||
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* | *Thermal oxide 110 nm/min | ||
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|style="background:LightGrey; color:black"|Lifetime of photoresist | |style="background:LightGrey; color:black"|Lifetime of photoresist | ||