Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing: Difference between revisions
| Line 14: | Line 14: | ||
The optimal defocus setting is probable a function of the resist thickness, but for 1.5µm resist, a defocus of -4 seems to be optimal. | The optimal defocus setting is probable a function of the resist thickness, but for 1.5µm resist, a defocus of -4 seems to be optimal. | ||
=Substrate | =Substrate positioning= | ||
During load, the machine will focus on the surface of the sample. Then, using the pneumatic focusing mechanism, it will detect the edges of the sample (this function dependes on the substrate template used) in order to determine the center of the sample. The following results rapport findings using the "4 inch wafer" template on a standard 100mm Si substrate. | During load, the machine will focus on the surface of the sample. Then, using the pneumatic focusing mechanism, it will detect the edges of the sample (this function dependes on the substrate template used) in order to determine the center of the sample. The following results rapport findings using the "4 inch wafer" template on a standard 100mm Si substrate. | ||