Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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*O<sub>2</sub>: 0-99 sccm | *O<sub>2</sub>: 0-99 sccm | ||
*C<sub>4</sub>F<sub>8</sub>: 0-300 sccm | *C<sub>4</sub>F<sub>8</sub>: 0-300 sccm | ||
*Ar: 0- | *Ar: 0-142 sccm | ||
*CF<sub>4</sub>: 99.9 sccm | *CF<sub>4</sub>: 0-99.9 sccm | ||
*CHF<sub>3</sub>: 99.9 sccm | *CHF<sub>3</sub>: 0-99.9 sccm | ||
*H<sub>2</sub>: 40 sccm | *H<sub>2</sub>: 0-40 sccm | ||
*He: 500 sccm | *He: 0-500 sccm | ||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | ||