Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
| Line 58: | Line 58: | ||
*C<sub>4</sub>F<sub>8</sub>: 0-300 sccm | *C<sub>4</sub>F<sub>8</sub>: 0-300 sccm | ||
*Ar: 0-100 sccm | *Ar: 0-100 sccm | ||
*CF<sub>4</sub> | *CF<sub>4</sub>: 99.9 sccm | ||
*CHF<sub>3</sub> | *CHF<sub>3</sub>: 99.9 sccm | ||
*H<sub>2</sub> | *H<sub>2</sub>: 40 sccm | ||
*He | *He: 500 sccm | ||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | ||