Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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*C<sub>4</sub>F<sub>8</sub>: 0-300 sccm | *C<sub>4</sub>F<sub>8</sub>: 0-300 sccm | ||
*Ar: 0-100 sccm | *Ar: 0-100 sccm | ||
*CF<sub>4</sub> | |||
*CHF<sub>3</sub> | |||
*H<sub>2</sub> | |||
*He | |||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | ||