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New page: ==D1 Furnace Apox== thumb|300x300px|D1 Furnace Apox: positioned in cleanroom ? D1 Furnace Apox is a Tempress? horizontal furnace for oxidation silicon wafers. This fur...
 
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==A rough overview of the performance of Apox furnace and some process related parameters==
==Overview of the performance of Apox furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="10"  
|-
|-
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:LightGrey; color:black"|Oxidation and annealing  
|style="background:WhiteSmoke; color:black"|Oxidation:
*Wet: with bubbler (water steam + N<math>_2</math>)
*Wet: with bubbler (water steam + N<math>_2</math>)
|-
|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="left"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
*Wet SiO<sub>2</sub>: used for layer thickness >5µm
*Wet SiO<sub>2</sub>: used for layer thickness >5µm
|-
|-
!style="background:silver; color:black" align="left"|Process parameter range
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1150 <sup>o</sup>C
*1150 <sup>o</sup>C
|-
|-
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 atm
*1 atm
|-
|-
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*N<math>_2</math>:? sccm
*N<math>_2</math>:? sccm
|-
|-
!style="background:silver; color:black" align="left"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-200 4" wafer (or 2" wafers) per run
*1-200 4" wafer (or 2" wafers) per run
|-
|-
|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box)
*Silicon wafers (new from the box)
|-  
|-  
|}
|}
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