Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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|Dry oxidation of gate oxide and other very clean oxides. | |Dry oxidation of gate oxide and other very clean oxides. | ||
|Dry and wet oxidation. Phosphorous drive-in is also done in the furnace. | |Dry and wet oxidation. Phosphorous drive-in is also done in the furnace. | ||
|Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and | |Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4. | ||
|Dry and wet oxidation and annealing of wafers from | |Dry and wet oxidation and annealing of wafers from Wafer Bonder 02 and from PECVD4 and PECVD3. | ||
|Wet oxidation of very thick oxides > 4 µm. | |Wet oxidation of very thick oxides > 4 µm. | ||
|Dry oxidation and annealing of almost all materials. | |Dry oxidation and annealing of almost all materials. | ||
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*All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4. | *All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4. | ||
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*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and | *All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4. | ||
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*All processed wafers have to be RCA cleaned, except for wafers from | *All processed wafers have to be RCA cleaned, except for wafers from Wafer Bonder 02 and from PECVD4 and PECVD3. | ||
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*Only new wafers | *Only new wafers | ||
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*Depends on the furnace quartz | *Depends on the furnace quartz set: | ||
**Metal: Almost all materials, permission is needed | **Metal: Almost all materials, permission is needed | ||
**Resist pyrolysis | **Resist pyrolysis | ||