Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

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!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide||style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:LightGrey; color:black"|Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide
|style="background:WhiteSmoke; color:black"|Oxidation:
*Dry
*Dry
*Wet: with torch (H<math>_2</math>+O<math>_2</math>)
*Wet: with torch (H<math>_2</math>+O<math>_2</math>)
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*Wet SiO<sub>2</sub>: 50Å to ~3µm ((takes too long to make it thicker)
*Wet SiO<sub>2</sub>: 50Å to ~3µm ((takes too long to make it thicker)
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!style="background:silver; color:black" align="left"|Process parameter range
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*800-1150 <sup>o</sup>C
*800-1150 <sup>o</sup>C
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 atm
*1 atm
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|-
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|


*O<math>_2</math>,H<math>_2</math> and N<math>_2</math>
*O<math>_2</math>,H<math>_2</math> and N<math>_2</math>
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!style="background:silver; color:black" align="left"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-30 4" wafer (or 2" wafers) per run
*1-30 4" wafer (or 2" wafers) per run
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|-
|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box or RCA cleaned)
*Silicon wafers (new from the box or RCA cleaned)

Revision as of 15:15, 7 May 2008

A1 Furnace Boron drive-in

A1 Boron drive in furnace: positioned in cleanroom 2

A1 Furnace boron drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition, oxidation of the boron phase layer. Boron pre-deposition takes place in the A2 Furnace boron pre-dep. It can also be used for drive in of boron which has been ion implanted.

A1 is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

Process knowledge


A rough overview of the performance of the boron drive-in furnace and some process related parameters

Purpose Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide Oxidation:
  • Dry
  • Wet: with torch (HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} +OFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} )
Performance Film thickness
  • Dry SiO2: 50Å to ~2000Å (takes too long to make it thicker)
  • Wet SiO2: 50Å to ~3µm ((takes too long to make it thicker)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • OFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} ,HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} and NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
  • From A2 furnace directly (e.g. incl. Predep HF)
  • In doubt: look at the cross contamination sheet or ask one from the furnace team
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