Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch): Difference between revisions
| Line 14: | Line 14: | ||
|- | |- | ||
!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Dry etch of | |style="background:LightGrey; color:black"|Dry etch of | ||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon oxide | *Silicon oxide | ||
*Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
*Quartz | *Quartz | ||
|- | |- | ||
!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | ||
|style="background:LightGrey; color:black"|Etch rates | |style="background:LightGrey; color:black"|Etch rates | ||
|style="background:WhiteSmoke; color:black"| | |||
~0.2-0.6 µm/min | ~0.2-0.6 µm/min | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Anisotropy | |||
|style="background:WhiteSmoke; color:black"| | |||
*Typical profiles: 86-90 degrees | *Typical profiles: 86-90 degrees | ||
|- | |- | ||
!style="background:silver; color:black" align="left"|Process parameter range | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
|style="background:WhiteSmoke; color:black"| | |||
*~2-20 mTorr | *~2-20 mTorr | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Gas flows | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*C<math>_4</math>F<math>_8</math>: 0-40 sccm | *C<math>_4</math>F<math>_8</math>: 0-40 sccm | ||
| Line 39: | Line 43: | ||
*N<math>_2</math>: 0-1000 sccm | *N<math>_2</math>: 0-1000 sccm | ||
|- | |- | ||
!style="background:silver; color:black" align="left"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
| Line 47: | Line 51: | ||
*Or several smaller pieces (needs carrier) | *Or several smaller pieces (needs carrier) | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon with layers of silicon oxide or silicon (oxy)nitride | *Silicon with layers of silicon oxide or silicon (oxy)nitride | ||
*Quartz wafers | *Quartz wafers | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Possible masking material | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Photoresist/e-beam resist | *Photoresist/e-beam resist | ||