Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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 |-style="background:silver; color:black"
 !
-![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 1]]
+![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]]
-![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 2]]
 ![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]]
 ![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
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 !Generel description
 |Wet etch of pure Al
-|Wet etch of Al + 1.5% Si
+|Wet etch/removal: TMAH<br>
-|
-Wet etch/removal: TMAH<br>
 Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
 |Dry plasma etch of Al
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 |
 *~100nm/min (pure Al)
-|
-*~60nm/min (Al+1.5% Si)
 |
 *~0.5nm/min (pure Al)
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 |-style="background:WhiteSmoke; color:black"
 !Etch profile
-|
-*Isotropic
 |
 *Isotropic
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 |
 *<nowiki>#</nowiki>1-25 100 mm wafers
-|
+*<nowiki>#</nowiki>1-25 150 mm wafers
-*<nowiki>#</nowiki>1-25 100 mm wafers
 |
 *Chips (6-60 mm)
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 |-style="background:WhiteSmoke; color:black"
 !'''Allowed materials'''
-|
-*Aluminium
-*Silicon
-*Silicon Oxide
-*Silicon Nitride
-*Silicon Oxynitride
-*Photoresist
-*E-beam resist
 |
 *Aluminium