Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Dry etch of | |style="background:LightGrey; color:black"|Dry etch of | ||
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*Silicon | *Silicon | ||
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!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | ||
|style="background:LightGrey; color:black"|Etch rates | |style="background:LightGrey; color:black"|Etch rates | ||
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*Silicon: ~4-6 µm/min (depending on features size and etch load) | *Silicon: ~4-6 µm/min (depending on features size and etch load) | ||
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|style="background:LightGrey; color:black"|Anisotropy | |||
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*Good | *Good | ||
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!style="background:silver; color:black" align="left"|Process parameter range | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
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*~0.1-95 mTorr | *~0.1-95 mTorr | ||
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|style="background:LightGrey; color:black"|Gas flows | |||
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*SF<math>_6</math>: 0-600 sccm | *SF<math>_6</math>: 0-600 sccm | ||
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*Ar: 0-100 sccm | *Ar: 0-100 sccm | ||
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!style="background:silver; color:black" align="left"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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*Or several smaller pieces on a carrier wafer | *Or several smaller pieces on a carrier wafer | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | |||
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*Silicon wafers | *Silicon wafers | ||
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*Quartz wafers | *Quartz wafers | ||
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| style="background:LightGrey; color:black"|Possible masking material | |||
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*Photoresist/e-beam resist | *Photoresist/e-beam resist | ||