Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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!style="background:silver; color:black;" align="left | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Deposition of dielectrica | |style="background:LightGrey; color:black"|Deposition of dielectrica | ||
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*Silicon oxide doped with Germanium | *Silicon oxide doped with Germanium | ||
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!style="background:silver; color:black" align="left" rowspan="4"|Performance | !style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Hydrogen will be incorporated in the films | *Hydrogen will be incorporated in the films | ||
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!style="background:silver; color:black" align="left" rowspan="3" |Process parameter range | !style="background:silver; color:black" align="left" rowspan="3" valign="top" |Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
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*5%B<math>_2</math>H<math>_6</math>:0-1000 sccm | *5%B<math>_2</math>H<math>_6</math>:0-1000 sccm | ||
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!style="background:silver; color:black" align="left" rowspan="3"|Substrates | !style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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