Specific Process Knowledge/Characterization/Profiler: Difference between revisions
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!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Profiler for measuring micro structures | |style="background:LightGrey; color:black"|Profiler for measuring micro structures||style="background:WhiteSmoke; color:black"| | ||
*Single | *Single line profiles | ||
*Wafer mapping | *Wafer mapping | ||
*[[Specific_Process_Knowledge/Characterization/Stress_measurement|Stress measurements]] by measuring wafer bow | *[[Specific_Process_Knowledge/Characterization/Stress_measurement|Stress measurements]] by measuring wafer bow | ||
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50 Å to 1 mm | 50 Å to 1 mm | ||
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|style="background:LightGrey; color:black"|Resolution | |style="background:LightGrey; color:black"|Resolution x y | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Down to 0.003 µm | Down to 0.003 µm | ||
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1 Å, 10 Å, 80 Å or 160 Å (for ranges 65 kÅ, 655 kÅ, 5240 kÅ and 1 mm respectively) | 1 Å, 10 Å, 80 Å or 160 Å (for ranges 65 kÅ, 655 kÅ, 5240 kÅ and 1 mm respectively) | ||
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|style="background:LightGrey; color:black"|Max | |style="background:LightGrey; color:black"|Max scan depth as a function of trench width W | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
1.2*(W[µm]-5µm) | 1.2*(W[µm]-5µm) | ||
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*Up to 6" | *Up to 6" | ||
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| style="background:LightGrey; color:black"|Substrate | | style="background:LightGrey; color:black"|Substrate materials allowed | ||
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*In principle all materials | *In principle all materials | ||