Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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| style="background:LightGrey; color:black"|Material allowed on the substrate | |||
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*Aluminium | |||
*All metals < 5% of the substrate coverage (ONLY PECVD3!) | |||
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!style="background:silver; color:black;" align="left"|Purpose | |||
|style="background:LightGrey; color:black"|Deposition of dielectrica | |||
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*Silicon oxide | |||
*Silicon nitride | |||
*Silicon oxynitride | |||
*PBSG (Phosphorous Boron doped Silica Glass) | |||
*Silicon oxide doped with Germanium | |||
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!style="background:silver; color:black" align="left" rowspan="4"|Performance | |||
|style="background:LightGrey; color:black"|Film thickness | |||
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*~10nm - 30µm | |||
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|style="background:LightGrey; color:black"|Index of refraction | |||
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*~1.4-2.1 | |||
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|style="background:LightGrey; color:black"|Step coverage | |||
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*In general: Not so good | |||
*PBSG: Floats at 1000<sup>o</sup>C | |||
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|style="background:LightGrey; color:black"|Film quality | |||
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*Not so dense film | |||
*Hydrogen will be incorporated in the films | |||
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!style="background:silver; color:black" align="left"rowspan="3" |Process parameter range | |||
|style="background:LightGrey; color:black"|Process Temperature | |||
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*300 <sup>o</sup>C | |||
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|style="background:LightGrey; color:black"|Process pressure | |||
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*~200-900 mTorr | |||
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|style="background:LightGrey; color:black"|Gas flows | |||
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*SiH<math>_4</math>:0-60 sccm | |||
*N<math>_2</math>O:0-3000 sccm | |||
*NH<math>_3</math>:0-1000 sccm | |||
*N<math>_2</math>:0-3000 sccm | |||
*GeH<math>_4</math>:0-6.00 sccm | |||
*5%PH<math>_3</math>:0-99 sccm | |||
*5%B<math>_2</math>H<math>_6</math>:0-1000 sccm | |||
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!style="background:silver; color:black" align="left"rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
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*1-3 4" wafer per run | |||
*1 6" wafer per run | |||
*Or several smaler pieces | |||
*Deposition on one side of the substrate | |||
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| style="background:LightGrey; color:black"|Substrate material allowed | |||
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*Silicon wafers | |||
**with layers of silicon oxide or silicon (oxy)nitride | |||
*Quartz wafers | |||
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| style="background:LightGrey; color:black"|Material allowed on the substrate | | style="background:LightGrey; color:black"|Material allowed on the substrate | ||
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