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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
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*Stoichiometric nitride, Si<sub>3</sub>N<sub>4</sub>
*Stoichiometric nitride, Si<sub>3</sub>N<sub>4</sub>
*Low stress/silicon rich nitride, SRN
*Silicon rich (low stress) nitride, SRN
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*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
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!Film thickness
!Film thickness
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*Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~1400 Å
*Stoichimetric nitride: ~5 nm - ~230 nm
*SRN: ~50 Å - ~2800 Å
*Silicon rich (low stress) nitride: ~5 nm - ~335 nm
Thicker nitride layers can be deposited over more runs
Thicker nitride layers can be deposited over more runs (maximum two)
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*~40 nm - 10 µm
*~40 nm - 10 µm
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!Process temperature
!Process temperature
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*780 <sup>o</sup>C - 845 <sup>o</sup>C
*Stoichiometric nitride: 780 <sup>o</sup>C - 800 <sup>o</sup>C
*Silicon rich (low stress) nitride: 810 <sup>o</sup>C - 845 <sup>o</sup>C
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*300 <sup>o</sup>C
*300 <sup>o</sup>C
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*Very low
*Very low
(Stoichiometric nitride: ~0.75 nm/min. Morten Bo Mikkelsen, March 2013)
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*Very high compared the LPCVD nitride
*Very high compared the LPCVD nitride
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