Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

Revision as of 08:57, 22 June 2017

Feedback to this page: click here

Deposition of Aluminium Nitride

AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition. AlN film can be deposited by using the Lesker Sputter System or the ALD2.

Only one method at the moment

	Sputter System Lesker
Generel description	Reactive Sputtering ( 2" Al target)
Stoichiometry	Not tested
Film Thickness	0nm - 200nm
Deposition rate	Not tested
Step coverage	Very good
Process Temperature	Up to 600^oC
Substrate size	chips 1x 100 mm wafer 1x 150 mm wafer
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Photoresist PMMA Mylar SU-8 Any metals

@@ Line 6: / Line 6: @@
 == Deposition of Aluminium Nitride ==
-AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using  the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]].
+AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition. AlN film can be deposited by using  the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] or the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]].
 ==Only one method at the moment==