Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
| Line 314: | Line 314: | ||
|<!--'''T'''--> 20 | |<!--'''T'''--> 20 | ||
|<!--'''Process time'''--> 30min | |<!--'''Process time'''--> 30min | ||
|<!--'''Comment'''--> HBC off, resist not burned | |<!--'''Comment'''--> HBC off, resist not burned. Microscope images! | ||
|<!--'''Results'''-->[[File:ASE RIE9 d.jpg|200px]][[File:ASE RIE9 f.jpg|200px]] | |<!--'''Results'''-->[[File:ASE RIE9 d.jpg|200px]][[File:ASE RIE9 f.jpg|200px]] | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||
| Line 342: | Line 342: | ||
|<!--'''T'''--> 20 | |<!--'''T'''--> 20 | ||
|<!--'''Process time'''--> 4min | |<!--'''Process time'''--> 4min | ||
|<!--'''Comment'''--> HBC off | |<!--'''Comment'''--> HBC off Microscope images! | ||
|<!--'''Results'''-->[[File:ASE RIE8 b.jpg|200px]][[File:ASE RIE8 c.jpg|200px]] | |<!--'''Results'''-->[[File:ASE RIE8 b.jpg|200px]][[File:ASE RIE8 c.jpg|200px]] | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||