Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
| Line 315: | Line 315: | ||
|<!--'''Process time'''--> 30min | |<!--'''Process time'''--> 30min | ||
|<!--'''Comment'''--> HBC off, resist not burned | |<!--'''Comment'''--> HBC off, resist not burned | ||
|<!--'''Results'''-->[[File:ASE RIE9 | |<!--'''Results'''-->[[File:ASE RIE9 d.jpg|200px]][[File:ASE RIE9 f.jpg|200px]] | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||
trench opening as a fraction of pitch--> | trench opening as a fraction of pitch--> | ||