Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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|width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch | |width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch | ||
|width="200"|<!--'''Results'''--> | |width="200"|<!--'''Results'''--> | ||
[[File: ICP metal | [[File: ICP metal s007592_21.jpg|100px|frameless]] [[File:ICP metal s007592_24.jpg|100px|frameless]] | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||
trench opening as a fraction of pitch--> | trench opening as a fraction of pitch--> | ||
| Line 159: | Line 159: | ||
1:4.3 (1µm P)<br> | 1:4.3 (1µm P)<br> | ||
1:5.1 [4µm P) | 1:5.1 [4µm P) | ||
|<!--'''Etch rate in Si'''--> | |||
? | |||
|- | |||
|- | |||
|-style="background:white; color:black" | |||
|s007593 | |||
|<!-- '''Mask material''' --> 880nm KRF | |||
|<!-- '''Barc etch''' -->barc etch CF 40s | |||
|<!-- '''Coil power''' --> 800W | |||
|<!--'''Platen power'''--> 100W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 10sccm | |||
|<!--'''Flow rate H2'''--> 28sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 8 min | |||
|width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch | |||
|width="200"|<!--'''Results'''--> | |||
[[File: ICP metal s007593_25.jpg|100px|frameless]] [[File:ICP metal s007593_28.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
32% (1µm pitch)<br> | |||
45% (4µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
85-86 | |||
|<!--'''Etch depth in SiO2'''--> | |||
501 nm (1µm) <br> | |||
881 nm (4µm) | |||
|<!--'''Etch rate'''--> | |||
63 nm/min (1µm pitch) <br> | |||
110 nm/min (4µm pitch | |||
|<!--'''Etch depth in resist'''--> | |||
100nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
1:5.0 (1µm P)<br> | |||
1:8.8 [4µm P) | |||
|<!--'''Etch rate in Si'''--> | |<!--'''Etch rate in Si'''--> | ||
? | ? | ||