Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
| Line 123: | Line 123: | ||
|<!--'''Selectivity (resist:SiO2)'''--> | |<!--'''Selectivity (resist:SiO2)'''--> | ||
>1:3.5 | >1:3.5 | ||
|<!--'''Etch rate in Si'''--> | |||
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|- | |||
|- | |||
|-style="background:white; color:black" | |||
|s007592 | |||
|<!-- '''Mask material''' --> 880nm KRF | |||
|<!-- '''Barc etch''' -->barc etch CF 40s | |||
|<!-- '''Coil power''' --> 1000W | |||
|<!--'''Platen power'''--> 200W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 10sccm | |||
|<!--'''Flow rate H2'''--> 28sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 5 min | |||
|width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch | |||
|width="200"|<!--'''Results'''--> | |||
[[File: ICP metal s007593_25.jpg|100px|frameless]] [[File:ICP metal s007593_28.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
41% (1µm pitch)<br> | |||
47% (4µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
86-87 | |||
|<!--'''Etch depth in SiO2'''--> | |||
727 nm (1µm) <br> | |||
864 nm (4µm) | |||
|<!--'''Etch rate'''--> | |||
145 nm/min (1µm pitch) <br> | |||
172 nm/min (4µm pitch | |||
|<!--'''Etch depth in resist'''--> | |||
170nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
1:4.3 (1µm P)<br> | |||
1:5.1 [4µm P) | |||
|<!--'''Etch rate in Si'''--> | |<!--'''Etch rate in Si'''--> | ||
? | ? | ||