Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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[[image:ASE.jpg|300x300px|right|thumb|The ICP-DRIE tool at Danchip: STS ASE - positioned in cleanroom B-1]] | [[image:ASE.jpg|300x300px|right|thumb|The ICP-DRIE tool at Danchip: STS ASE - positioned in cleanroom B-1]] | ||
The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus]] the ASE now only serves as backup silicon dry etcher. | The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus]] the ASE now only serves as backup silicon dry etcher and is also used as a polymer etcher. From around December 2017 this machine will turn into a "dirty" machine meaning that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses will be added to the machine during this summer to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of the current processes. Any clean processes and sensitive processes should be moved to the DRIEs) during this autumn (2017). | ||
'''The Bosch process: Etching of silicon''' | '''The Bosch process: Etching of silicon''' | ||