Specific Process Knowledge/Bonding/Eutectic bonding: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Rkch (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
271 edits
No edit summary
Rkch (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
271 edits
Line 9: Line 9:
!Eutecticum
!Eutecticum
!Eutectic temperature
!Eutectic temperature
!Bonding temperature in EVG NIL
!Bonding temperature in Wafer Bonder 02
|- valign="top"
|- valign="top"
|AuSi
|AuSi

Revision as of 09:37, 2 June 2017

Feedback to this page: click here

Eutectic Bonding

Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390oC). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature.


Eutecticum Eutectic temperature Bonding temperature in Wafer Bonder 02
AuSi 365oC 390oC
AuSn <300oC 300oC
AuSnNi . .
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Bonding/Eutectic_bonding&oldid=26794"