Specific Process Knowledge/Wafer cleaning/IMEC: Difference between revisions
| Line 37: | Line 37: | ||
|2 | |2 | ||
|Piranha | |Piranha | ||
|Mixture: H<sub>2</sub>SO<sub>4</sub>:H<sub>2</sub>O<sub>2</sub> (4:1) | |Mixture: H<sub>2</sub>SO<sub>4</sub>:H<sub>2</sub>O<sub>2</sub> (4:1)<br> | ||
Temp: 80<sup>o</sup>C | Temp: 80<sup>o</sup>C<br> | ||
Time: 5 min | Time: 5 min | ||
|You can use the 'Mask Clean' bath in Wet Bench 04 (in cleanroom D-3). <b>However, this requires planning at least a couple of days in advance, since the bath is primarily used for other purposes!</b>. Alternatively use a very clean glass beaker. The recommended procedure is: | |You can use the 'Mask Clean' bath in Wet Bench 04 (in cleanroom D-3). <b>However, this requires planning at least a couple of days in advance, since the bath is primarily used for other purposes!</b>. Alternatively use a very clean glass beaker. The recommended procedure is: | ||
*Pour H<sub>2</sub>SO<sub>4</sub> into bath/beaker | *Pour H<sub>2</sub>SO<sub>4</sub> into bath/beaker | ||
| Line 56: | Line 55: | ||
|4 | |4 | ||
|IMEC | |IMEC | ||
|Mixture: DI water:5% HF:Isopropanol (100:10:1) | |Mixture: DI water:5% HF:Isopropanol (100:10:1)<br> | ||
Temp: 25 <sup>o</sup>C | Temp: 25<sup>o</sup>C<br> | ||
Time: 100 sec | Time: 100 sec | ||
|<b>Make an appointment some days in advance with a Danchip employee to help you with this step!</b> | |<b>Make an appointment some days in advance with a Danchip employee to help you with this step!</b> | ||
*Clean tank (Cleanroom D-3, the 'Optional Bath' inside Wet Bench 05: Al etch) | *Clean tank (Cleanroom D-3, the 'Optional Bath' inside Wet Bench 05: Al etch) | ||
| Line 78: | Line 76: | ||
|Not nitride wafers! | |Not nitride wafers! | ||
Mixture: H<sub>2</sub>SO<sub>4</sub>:H<sub>2</sub>O<sub>2</sub> (4:1) | Mixture: H<sub>2</sub>SO<sub>4</sub>:H<sub>2</sub>O<sub>2</sub> (4:1) | ||
Temp: 80 <sup>o</sup>C | Temp: 80<sup>o</sup>C<br> | ||
Time: 20 min | Time: 20 min<br> | ||
|Re-use previous piranha | |Re-use previous piranha | ||
Revision as of 09:55, 19 May 2017
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The IMEC process is used for cleaning of wafers prior to fusion bonding
The IMEC cleaning process is used in circumstances where extraordinary clean wafers are required. It is primarily intended for cleaning wafers prior to fusion bonding. This procedure is based on the IMEC cleaning process: M. Meuris et al. "The IMEC clean: A new concept for particle and metal removal on Si surfaces.", Solid state Technology, Vol. 38, Issue 7, pp 109-113, 1995. Has been slightly modified by Karen Birkelund.
Information about equipment relevant to this procedure can be found in LabManager:
Info page for 'Fume hood 01: Acids/bases'
Info page for 'Fume hood 02: Acids/bases'
Info page for 'Wet bench 03: Wafer and mask cleaning'
Info page for 'Wet bench 05: Al etch'
Info page for 'Wafer Cleaning'
Info page for 'Optional Bath (Currently not in operation!)'
| Step | Process | Details | Comments | Comments |
|---|---|---|---|---|
| 1 | Pre-bond cleaning of Si wafers prior to fusion bonding. | . |
|
Get CLEAN box for wafers!!! |
| 2 | Piranha | Mixture: H2SO4:H2O2 (4:1) Temp: 80oC |
You can use the 'Mask Clean' bath in Wet Bench 04 (in cleanroom D-3). However, this requires planning at least a couple of days in advance, since the bath is primarily used for other purposes!. Alternatively use a very clean glass beaker. The recommended procedure is:
|
Maybe clean the tank the day before! |
| 3 | Rinse | 2 min. rinse | Rinse you wafers with DI-water. | Put into dedicated wet box for IMEC |
| 4 | IMEC | Mixture: DI water:5% HF:Isopropanol (100:10:1) Temp: 25oC |
Make an appointment some days in advance with a Danchip employee to help you with this step!
|
. |
| 5 | Rinse | 2 min. rinse | Put into dedicated wet box for IMEC | . |
| 6 | Piranha | Not nitride wafers!
Mixture: H2SO4:H2O2 (4:1)
Temp: 80oC |
Re-use previous piranha
Makes wafers hydrophilic |
. |
| 7 | Rinse & spin dry | 5 min rinse | . | . |
| 8 | Put wafers in new clean carrier box | . | . | . |