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Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions

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Lgpe (talk | contribs)
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RESIST 240                A dose of 240 µC/cm2 is used   
RESIST 240                A dose of 240 µC/cm2 is used   
SHOT A,8                 The shot step between individual beam shots is 4 nm
SHOT A,16                 The shot step between individual beam shots is 4 nm
OFFSET(0,0)              An offset of 0 µm is applied in both X and Y
OFFSET(0,0)              An offset of 0 µm is applied in both X and Y