Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions
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RESIST 240 A dose of 240 µC/cm2 is used | RESIST 240 A dose of 240 µC/cm2 is used | ||
SHOT A, | SHOT A,16 The shot step between individual beam shots is 4 nm | ||
OFFSET(0,0) An offset of 0 µm is applied in both X and Y | OFFSET(0,0) An offset of 0 µm is applied in both X and Y | ||