Specific Process Knowledge/Characterization/III-V ECV-profiler: Difference between revisions

Revision as of 15:12, 24 March 2017

Feedback to this page: click here

III-V ECV-profiler

The ECV (Electrochemical Capacitance-Voltage) technique is used to measure carrier-density as a function of depth (doping-profile) on planar semiconductor structures - usually III-V compound semiconductors.

The ECV-profiler is maintained by DTU fotonik (not Danchip) and is therefor not in LabManager!

ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.

Equipment performance and process related parameters

Performance	Excitation	halogen white light source for n-type measurements to generate holes for the etching process
	Detection	between 10^13 to 10^20 carriers/cm^3
	Sample size	from 5x5mm (10x10mm recommended) up to 2" approximately
	Resolution	Minimum depth resolution ~1 nm Measurement area: small ring: Ø 1 mm large ring: Ø 3 mm
	Carrier density accuracy	very dependent on sample. Uncertainty can easily be +-50%.
Materials	Allowed substrate materials	III-V Silicon

Revision as of 14:07, 11 December 2014 view source Bghe (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,018 edits Created page with "'''Feedback to this page''': '''[mailto:danchipsupport@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Kno..."		Revision as of 15:12, 24 March 2017 view source Jehan (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891, Bureaucrats, danchip, Administrators 1,073 edits →‎III-V ECV-profiler Newer edit →
Line 12:		Line 12:

	ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.		ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.


	==Equipment performance and process related parameters==		==Equipment performance and process related parameters==