Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD

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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Deposition of SiN with PECVD4

Recipe	Dep. rate [nm/min]	RI	Unif. [%]	Stress [MPa]	Comments	SiH4 [sccm]	NH3 [sccm]	N2O [sccm]	N2 [sccm]	Pressure [mTorr]	Power [W]	Load	Tune	Time [mm:ss]	Tested
MF SIN	12.9-13.0 nm/min	2.038-2.044	± 1.7%	157 MPa		40	40		1920	900 mTorr	20HF6"/20LF2"			10:00/60:00(stress)	February 2017 bghe
LF SIN	40-43 nm/min	1.983-1.984	± 3.9-4.4%	Compressive: 565.4 MPa		40	20		1960	550 mTorr	60LF			2:00/23:00(stress)	February 2017 bghe
HF SiN	12.2-12.4 nm/min	2.017-2.021	± 1.2-1.6%	Tensile: 431.6 MPa		40	55		1960	900 mTorr	20 W			10:00/56:00(stress)	February 2017 bghe

Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
SINSTD80	30	20	1000	500	80
SINSTD96	30	20	1000	500	96
1SiN	40	20	1000	700	150

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]	Stress [MPa]	BHF etch rate [Å/min]	Comments
1SiN	Deposition rate in the middle of two wafers: 49nm/min+-1nm/min (2015-04-24 BGHE) In the middel: 72.6-76.4 nm/min (2014-08-13 BGHE) Old shower head Variation over 3 wafers: 71.4-78.6 nm/min (2014-08-13 BGHE) Old shower head		~2-4% (2015-04-24 BGHE) ~5% in the middel (4") (2014-08-13 BGHE) Old shower head ~10% over 3 wafers (2014-08-13 BGHE) Old shower head
SINSTD80	68nm/min (2014-07-07 JML)- unstable deposition rate
SINSTD96 - unstable deposition rate

Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

Quality Controle (QC) for PECVD3

The QC procedure for PECVD3 The newest QC data for PECVD3 QC Recipe: QCNITRIDE SiH4 flow 30 sccm NH3 flow 30 sccm N2 flow 1470 sccm Pressure 845 mTorr RF-power HF: 100 W 7.8s LF: 100 W 2.2s QC limits PECVD3 Depoition rate ~40 nm/min Non-uniformity <3.0 % Refractive Index 2.02 - 2.04

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
MFSiNLS2	30	30	1470	845	100HF 7.8s 100LF 2.2s	Low stress nitride - standard recipe. The latest measured values can be seen in the process control sheet in LabManager.
MFSiNLS	30	30	1470	650	20HF 6s 30LF 2s	Low stress nitride - old standard recipe. This one is not running well any more.
LFSiN	30	15	1470	550	60LF	Compressive stress
HFSiN	30	42	1470	900	20HF	Tensile stress

LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress

Expected results

Recipe name	Deposition rate [Å/min]	RI	Uniformity [%] [Std./mean]	Stress [MPa]	KOH etch rate [Å/min]	BHF etch rate [Å/min]	See more
MFSiNLS2	~422 (bghe Feb 2016)	~2.03	~2	~6 (bghe Feb 2016)	~2.1 (bghe Feb 2016)	~?	see DOE
MFSiNLS	~107	~1.99	~4	~-30	~2.5	~250	.
LFSiN	~550	~1.96	~3	~-630	.	.	.
HFSiN	~130	~1.97	~2	~460	.	.	.

Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. Expired!:PECVD1 has been decommissioned

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
1nitride	30	20	1000	500	80
1nit_std	40	20	1960	550	60	Process control recipe

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]	Stress [MPa]	BHF etch rate [Å/min]	Comments
1nitride
1nit_std	~32	1.89	~1		~700	The latest measured values can be seen in the process control sheet in LabManager