Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
| Line 33: | Line 33: | ||
|157 MPa <!-- Stress [MPa] --> | |157 MPa <!-- Stress [MPa] --> | ||
|<!-- Comments --> | |<!-- Comments --> | ||
|<!-- SiH4 [sccm] --> | |40<!-- SiH4 [sccm] --> | ||
|<!-- NH3 [sccm] --> | |40<!-- NH3 [sccm] --> | ||
|<!-- N2O [sccm] --> | |<!-- N2O [sccm] --> | ||
|<!-- N2 [sccm] --> | |1920<!-- N2 [sccm] --> | ||
|<!-- Pressure [mTorr] --> | |900 mTorr<!-- Pressure [mTorr] --> | ||
|<!-- Power [W] --> | |20HF6"/20LF2"<!-- Power [W] --> | ||
|<!-- Load --> | |<!-- Load --> | ||
|<!-- Tune --> | |<!-- Tune --> | ||
|<!-- Time [mm:ss] --> | |2:00/<!-- Time [mm:ss] --> | ||
|February 2017 bghe<!--Tested --> | |February 2017 bghe<!--Tested --> | ||
|- | |- | ||