Jump to content

LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/AZO pillars: Difference between revisions

← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Line 79: Line 79:
|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.4000000000000000000000000000000
!1.6
|Plasma surface treatment.
|Plasma surface treatment.
|To ensure that remainings of DUV resist are gone, samples are treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
|To ensure that remainings of DUV resist are gone, samples are treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
Line 91: Line 91:


|-
|-
!1.50000000000000000000000000000000
!1.7
|Scanning Electron Microscopy inspection.  
|Scanning Electron Microscopy inspection.  
|By cleaving the sample it is possible to inspect DRIE etched Si trenches in cross-sectional mode.
|By cleaving the sample it is possible to inspect DRIE etched Si holes in cross-sectional mode.
|
|
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
Line 100: Line 100:
<br clear="all" />
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:Si_trench007.jpg|250x350px|center]]
|See Figures 3a and 4a above.
|-
|-


|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.60000000000000000000000000000000000
!1.8
|Atomic Layer Deposition of Al-doped ZnO (AZO).
|Atomic Layer Deposition of Al-doped ZnO (AZO).
|Deposition carried at 200<sup>o</sup>C. Thickness is above 100 nm.
|Deposition carried at 250<sup>o</sup>C. For compleate pillars the thickness needs to above 100 nm. For AZO tubes only 20 nm (partial deposition) requires.
||Equipment used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]. Standard recipe used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/AZO_deposition_using_ALD| AZO 20T]].
||Equipment used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]. Standard recipe used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/AZO_deposition_using_ALD| AZO 25T]].
|[[image:02_ALD_eves.jpg|250x350px|center]]
|[[image:6_3_ALD_full pillars.jpg|250x350px|center]]
|-
|-


|-
|-
!1.700000000000000000000000000
!1.9
|Scanning Electron Microscopy inspection.
|Scanning Electron Microscopy inspection.
|By cleaving the sample it is possible to inspect ALD coatings deposited on Si trenches in cross-sectional mode.
|By cleaving the sample it is possible to inspect ALD coatings deposited on Si trenches in cross-sectional mode.
Line 122: Line 122:
<br clear="all" />
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:03_ALD_eves_AZO.jpg|250x350px|center]]
|See figures 3b and 4b above.
|-
|-


|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.800000000000000000000000000000
!1.10
|Ion Beam Etching (IBE).
|Ion Beam Etching (IBE).
|Opening of deposited AZO top layer using recipe [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch|"Ti acceptance"]] there the stage was placed to 0<sup>o</sup> degree. The back side of the wafer also needs to be exposed to etching.
|Opening of deposited AZO top layer using recipe [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch|"Ti acceptance"]] there the stage was placed to 0<sup>o</sup> degree. The back side of the wafer also needs to be exposed to etching.
|[[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300|IBE/IBSD Ionfab 300]]
|[[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300|IBE/IBSD Ionfab 300]]
|[[image:04_ALD_eves.jpg|250x350px|center]]
|[[image:7_ALD_fill pillars_Ar.jpg|250x350px|center]]
|-
|-


|-
|-
!1.900000000000000000000000000000
!1.11
|Scanning Electron Microscopy inspection.
|Scanning Electron Microscopy inspection.
|By cleaving the sample it is possible to inspect IBE etching results in cross-sectional mode.
|By cleaving the sample it is possible to inspect IBE etching results in cross-sectional mode.
Line 144: Line 144:
<br clear="all" />
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:05_ALD_eves_ICP.jpg|250x350px|center]]
|See Figures 3c and 4c above.
|-
|-


|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.10000000000000000000000000000000
!1.12
|Selective etch of Si between ALD AZO coatings.
|Selective etch of Si between ALD AZO coatings.
|Si etching proceeds using reactive ion etching with isotropic process based on SF<sub>6</sub> process gas.
|Si etching proceeds using reactive ion etching with isotropic process based on SF<sub>6</sub> process gas.
||Equipment used: [[Specific_Process_Knowledge/Etch/RIE_(Reactive_Ion_Etch)|RIE2]].
||Equipment used: [[Specific_Process_Knowledge/Etch/RIE_(Reactive_Ion_Etch)|RIE2]].
|[[image:06_ALD_eves.jpg|250x350px|center]]
|[[image:8_final pillars.jpg|250x350px|center]]
|-
|-


|-
|-
!1.110000000000000000000000000
!1.13
|Scanning Electron Microscopy inspection of fabricated structure.
|Scanning Electron Microscopy inspection of fabricated structures.
|Proof of final result.
|Proof of final result.
|
|
Line 166: Line 166:
<br clear="all" />
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:07_ALD_eves_RIE_SF6.jpg|250x350px|center]]
|See Figures 2, 3d and 4d above.  
|-
|-


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=LabAdviser/Technology_Research/Fabrication_of_Hyperbolic_Metamaterials_using_Atomic_Layer_Deposition/AZO_pillars"