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LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/AZO gratings: Difference between revisions

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Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
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!1.3
!1.3
|Deep reactive ion etching (DRIE)
|Deep reactive ion etching (DRIE)
|DRIE; [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/DUVetch|Recipe: PolySOI10]]
|DRIE; [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/DUVetch|Recipe: PolySOI10]] Recipe needs to be tuned. Adjusted parameters: temperature, etching and passivation times.
| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus|DRIE Pegasus]].
| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus|DRIE Pegasus]].
|[[image:00_zero (3)_nanogratings.JPG|250x350px|center|]]
|[[image:00_zero (3)_nanogratings.JPG|250x350px|center|]]
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|Plasma surface treatment
|Plasma surface treatment
|To ensure that remainings of DUV resist are gone, samples are treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
|To ensure that remainings of DUV resist are gone, samples are treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
|[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2| Plasma Asher 2]].
|
[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2| Plasma Asher 2]]
<br clear="all" />
[[Specific_Process_Knowledge/Lithography/Strip#Plasma_asher| Plasma Asher 1]]
<br clear="all" />
|
|
|-
|-
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<br clear="all" />
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:Si_trenches_nanogratings.jpg|250x350px|center]]
|[[image:Si_trench007.jpg|250x350px|center]]
|-
|-


|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.6
!1.6
|Atomic Layer Deposition of either Al<sub>2</sub>O<sub>3</sub> or TiO<sub>2</sub>
|Atomic Layer Deposition of Al-doped ZnO (AZO)
|Deposition carried at 150C.Thickness is 90 nm.
|Deposition carried at 200<sup>o</sup>C. Thickness is above 100 nm.
||Equipment used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]. Standard recipes used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD#Al2O3_recipe_for_deposition_on_high_aspect_ratio_structures| Al2O3T]] and [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD#TiO2_deposition_on_trenches| TiO2T]] .
||Equipment used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]. Standard recipe used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/AZO_deposition_using_ALD| AZO 20T]].
|[[image:00_zero (4)_nanogratings.JPG|250x350px|center]]
|[[image:02_ALD_eves.jpg|250x350px|center]]
|-
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|-
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<br clear="all" />
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:TiO2_coating_nanogratings.jpg|250x350px|center]]  
|[[image:03_ALD_eves_AZO.jpg|250x350px|center]]  
|-
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|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.8
!1.8
|Opening of deposited Al<sub>2</sub>O<sub>3</sub> or TiO<sub>2</sub> top layers.
|Ion Beam Etching (IBE).
|Etching happens using ICP Metal etcher with Cl<sub>2</sub>/BCl<sub>3</sub> process gasses.
|Opening of deposited AZO top layer using recipe [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch|"Ti acceptance"]] there the stage was placed to 0<sup>o</sup> degree. The back side of the wafer also needs to be exposed to etching.
||Equipment used: [[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|Metal ICP Etcher]].
|[[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300|IBE/IBSD Ionfab 300]]
|[[image:00_zero (6)_nanogratings.JPG|250x350px|center]]
|[[image:04_ALD_eves.jpg|250x350px|center]]
|-
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|-
|-
!1.9
!1.9
|Scanning Electron Microscopy inspection
|Scanning Electron Microscopy inspection
|By cleaving the sample it is possible to inspect ICP etcher results Si trenches in cross-sectional mode
|By cleaving the sample it is possible to inspect IBE etching results in cross-sectional mode
|
|
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
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<br clear="all" />
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:TiO2_top_removal_nanogratings.jpg|250x350px|center]]  
|[[image:05_ALD_eves_ICP.jpg|250x350px|center]]  
|-
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|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.10
!1.10
|Selective etch of Si between ALD  Al<sub>2</sub>O<sub>3</sub> or TiO<sub>2</sub> coatings.
|Selective etch of Si between ALD  AZO coatings.
|Si etching proceeds using ICP Metal etcher with isotropic  process based on SF<sub>f</sub> process gas.
|Si etching proceeds using ICP Metal etcher with isotropic  process based on SF<sub>6</sub> process gas.
||Equipment used: [[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|Metal ICP Etcher]].  
||Equipment used: [[Specific_Process_Knowledge/Etch/RIE_(Reactive_Ion_Etch)|RIE2]].
|[[image:00_zero (7)_nanogratings.JPG|250x350px|center]]
|[[image:06_ALD_eves.jpg|250x350px|center]]
|-
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|-
|-
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<br clear="all" />
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:TiO2_grating_nanogratings.jpg|250x350px|center]]
|[[image:07_ALD_eves_RIE_SF6.jpg|250x350px|center]]  
|-
 
|-
|- style="background:#BCD4E6; color:black"
!1.12
|Ion beam etching. (Optional)
|Additional shape of the top part. 20 mijn etch using recipe [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch|"Ti acceptance"]] there the stage shoud be placed to 0<sup>o</sup> degree. SEM cross section is used for inspection
|[[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300|IBE/IBSD Ionfab 300]]
|[[image:image1004_nanogratings.jpg|250x350px|center]]  
|-
|-


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