Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions

Revision as of 13:23, 13 March 2017

Feedback to this page: click here

Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Alcatel)	Sputter (Lesker)
General description	E-beam deposition of Ta	Sputter deposition of Ta
Pre-clean	RF Ar clean	RF Ar clean
Layer thickness	10Å to 1µm*	10Å to
Deposition rate	2Å/s to 15Å/s	~0.3Å/s
Batch size	Up to 1x4" wafers smaller pieces	Pieces or 1x4" wafer or 1x6" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment

* For thicknesses above 200 nm permission is required.

Revision as of 10:25, 21 October 2014 view source Knil (talk \| contribs) DCH-Employees-701 420 edits No edit summary ← Older edit		Revision as of 13:23, 13 March 2017 view source Mdyma (talk \| contribs) danchip 584 edits No edit summary Newer edit →
Line 3:		Line 3:


	Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.		Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.