Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | *Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
*Wafers from the LPCVD furnaces | *Wafers from the LPCVD furnaces | ||
*Wafers from | *Wafers from Wafer Bonder 02 (assuming they were clean and not have been exposed to any metal when entering the Wafer Bonder 02) | ||
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