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Specific Process Knowledge/Etch/Wet Chromium Etch: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, danchip
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DCH-Employees-701, NLAB-Employees-701, danchip
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Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom B-1 or D-3. You can see the APV [http://labmanager.dtu.dk/d4Show.php?id=4748&mach=368 here].
Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom B-1 or D-3. You can see the APV [http://labmanager.dtu.dk/d4Show.php?id=4748&mach=368 here].


We have two solutions for this:
We use the following solution to etch chromium:


# Commercial chromium etch (Chrome Etch 18). You can see the KBA [http://kemibrug.dk/KBA/CAS/107388/?show_KBA=1&portaldesign=1 here]
# Commercial chromium etch (Chrome Etch 18). You can see the KBA [http://kemibrug.dk/KBA/CAS/107388/?show_KBA=1&portaldesign=1 here]
# HNO<sub>3</sub>:H<sub>2</sub>O:cerisulphate  - 90ml:1200ml:15g
Etch rate are depending on the level of oxidation of the metal.


====How to mix the Chromium etch 2:====
The etch rate depends on the level of surface oxidation of the chromium metal, but the standard procedure (etch at room temperature: ~22°C) the etch rate is around 150 nm/min.
#Take a beaker and add 15g of cerisulphate.
#Add a little water while stirring - make sure all lumps are gone.
#Add water until 600 ml - keep stirring (use magnetic stirring)
#Add 90 ml HNO<sub>3</sub>
#When the cerisulphate is completely dissolved (clear liquid) you can add the other 600 ml of wafer.


 
===Overview of the chromium etch process===
<br clear="all" />
 
===Comparing the two wet chromium etches===
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
|-
|-
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!
!
! Chromium etch 1
! Chromium etch 1
! Chromium etch 2
|-  
|-  


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!General description
!General description
|
Etch of chromium
|
|
Etch of chromium
Etch of chromium
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|[http://labmanager.dtu.dk/d4Show.php?id=4748&mach=368 see APV here].  
|[http://labmanager.dtu.dk/d4Show.php?id=4748&mach=368 see APV here].  
[http://kemibrug.dk/KBA/CAS/107388/?show_KBA=1&portaldesign=1 see KBA here]
[http://kemibrug.dk/KBA/CAS/107388/?show_KBA=1&portaldesign=1 see KBA here]
|[http://labmanager.dtu.dk/d4Show.php?id=4748&mach=368 see APV here]
|-
|-


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!Chemical solution
!Chemical solution
|Chrome Etch 18
|Chrome Etch 18
|HNO<sub>3</sub>:H<sub>2</sub>O:cerisulphate  - 90ml:1200ml:15g
|-
|-


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!Process temperature
!Process temperature
|Room temperature
|Room temperature
|Room Temperature


|-
|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Possible masking materials
!Possible masking materials
|Photoresist (1.5 µm AZ5214E)
|Photoresist (1.5 µm AZ5214E)
|Photoresist (1.5 µm AZ5214E)
|-
|-
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Etch rate
!Etch rate
|~ ? nm/min
|~ 150 nm/min at 22°C
|~40-100 nm/min  
|-
|-


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Batch size
!Batch size
|1-7 4" wafers at a time
|1-7 4" wafers at a time
|1-7 4" wafers at a time
|-
|-
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!Size of substrate
!Size of substrate
|Any size and number that can go inside the beaker in use   
|Any size and number that can go inside the beaker in use   
|Any size and number that can go inside the beaker in use
|-
|-


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
!Allowed materials
|No restrictions.
Make a note on the beaker of which materials have been processed.
|No restrictions.  
|No restrictions.  
Make a note on the beaker of which materials have been processed.
Make a note on the beaker of which materials have been processed.
|-
|-
|}
|}
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