Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions
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[[Category: Etch (Wet) bath|Silicon Nitride]] | [[Category: Etch (Wet) bath|Silicon Nitride]] | ||
[[Image:Nitrideetch.JPG|300x300px|thumb|Wet nitride etch: positioned in cleanroom D-3]] | |||
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Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafer carrier. The wetbench is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer. | Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafer carrier. The wetbench is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer. | ||