Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
-|style="background:WhiteSmoke; color:black"|<b>6" LPCVD nitride furnace (B2)</b>
+|style="background:WhiteSmoke; color:black"|<b>6" LPCVD nitride furnace (E3)</b>
-|style="background:WhiteSmoke; color:black"|<b>4" LPCVD nitride furnace (E3)</b>
+|style="background:WhiteSmoke; color:black"|<b>4" LPCVD nitride furnace (B2)</b>
 |-
 !style="background:silver; color:black;" align="center"|Purpose
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 |style="background:LightGrey; color:black"|Gas flows
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-*Dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>): 80 sccm
+For Low stress nitride
-*Ammonia (NH<sub>3</sub>): 20 sccm
+*Dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>): 200 sccm
+*Ammonia (NH<sub>3</sub>): 50 sccm
+For Stoichiometric nitride on 6" wafers
+*Dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>): 45 sccm
+*Ammonia (NH<sub>3</sub>): 180 sccm
 |style="background:WhiteSmoke; color:black"|
 *Dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>): 20 sccm
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 |style="background:LightGrey; color:black"|Batch size
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-*1-15 100 mm wafers
+*1-25 100 mm wafers
+*1-25 150 mm wafers
 Including a test wafer
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-*1-25 100 mm wafers
+*1-15 100 mm wafers
-*1-25 150 mm wafers
 Including a test wafer
 |-