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Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Paphol (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
912 edits
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*Ammonia (NH<sub>3</sub>): 20 sccm
*Ammonia (NH<sub>3</sub>): 20 sccm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>): 10-45 sccm
*Dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>): 20 sccm
*Ammonia (NH<sub>3</sub>): 160-180 sccm
*Ammonia (NH<sub>3</sub>): 80 sccm
The gas flows depend on whether nitride is deposited on 4" or 6" wafers
The gas flows depend on whether nitride is deposited on 4" or 6" wafers
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