Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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== Process information == | == Process information == | ||
*[[/Deposition of low stress nitride using the 4" LPCVD nitride furnace|Deposition of low stress nitride using the 4" LPCVD nitride furnace]] | *[[/Deposition of low stress nitride using the 4" LPCVD nitride furnace|Deposition of low stress nitride using the 4" LPCVD nitride furnace <span style="color:Red">(No longer available to deposit low stress nitride by 4" LPCVD nitride furnace)</span>]] | ||
*[[/Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace|Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace]] | *[[/Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace|Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace]] | ||
*[[/Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace|Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace <span style="color:Red">(Only available for 6" wafers and special permission required)</span>]] | |||
*[[/Deposition of low stress nitride using the 6" LPCVD nitride furnace|Deposition of low stress nitride using the 6" LPCVD nitride furnace ]] | |||
*[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | *[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | ||