Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions
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*Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>: Maximum 100 nm (without permission) | *Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>: Maximum 100 nm (without permission) | ||
*SiO<sub>2</sub>, AlN, TiN: Maximum 50 nm ( | *SiO<sub>2</sub>, AlN, TiN: Maximum 50 nm (without permission) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter | ||