Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions

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 *[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/AlN_deposition_using_ALD2 AlN deposition using '''ALD 2 (PEALD)''']
 *[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiN_deposition_using_ALD2 TiN deposition using '''ALD 2 (PEALD)''']
 ==Equipment performance and process related parameters==
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 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
-|style="background:WhiteSmoke; color:black"|<b>ALD2 (PEALD)</b>
+|style="background:WhiteSmoke; color:black"|<b>ALD 2 (PEALD)</b>
 |-
 !style="background:silver; color:black;" align="center" width="60"|Purpose
-|style="background:LightGrey; color:black"|ALD (atomic layer deposition) of
+|style="background:LightGrey; color:black"|Thermal ALD or PEALD deposition of
 |style="background:WhiteSmoke; color:black"|
 *Al<sub>2</sub>O<sub>3</sub>
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 *SiO<sub>2</sub>
 *HfO<sub>2</sub>
+*AlN
 *TiN
-*AlN
+Is is not possible to deposit oxides and nitrides at the same time
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
 |style="background:LightGrey; color:black"|Deposition rates
 |style="background:WhiteSmoke; color:black"|
-*Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on the temperature). Result from ALD1
+Depending on the deposited materials and temperature.
-*TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on the temperature). Result from ALD1
+More information can be found on the pages under "Process information"
 |-
 |style="background:LightGrey; color:black"|Thickness
 |style="background:WhiteSmoke; color:black"|
-*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm
+*Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>: Maximum 100 nm (without permission)
+*SiO<sub>2</sub>, AlN, TiN: Maximum 50 nm (witout permission)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter
-|style="background:LightGrey; color:black"|Temperature
+|style="background:LightGrey; color:black"|Deposition temperature
 |style="background:WhiteSmoke; color:black"|
-*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C
+Maximum 450 <sup>o</sup>C
 |-
-|style="background:LightGrey; color:black"|Precursors
+|style="background:LightGrey; color:black"|Thermal precursors
 |style="background:WhiteSmoke; color:black"|
 *TMA - Trimethylaluminium
 *TiCl<sub>4</sub> - Titaniumtetrachloride
 *H<sub>2</sub>O - Water
-*O<sub>3</sub> - Ozone
+*O<sub>3</sub> - Ozone. Not available at the moment
 *NH<sub>3</sub> - Ammonia
 *SAM24 - Bis(diethylamono)silane
@@ Line 103: / Line 106: @@
 *O<sub>2</sub>
 *NH<sub>3</sub>
-*(4% H<sub>2</sub> in N<sub>2</sub>) will be installed later
+*(4% H<sub>2</sub> in N<sub>2</sub>). Not available at the moment
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*Small samples and single wafers are loaded through the load lock
+*One 200 mm wafer - Loaded directly through the loadlock
-*100 mm and smaller are loaded on a carrier plate (150 mm)
+*One 150 mm wafer - Loaded directly through the loadlock
-*150 mm or 200 mm wafer don't need the carrier plate
+*One 100 mm wafer - Loaded on a 150 mm carrier plate or dummy wafer with an etched recess through the load lock
-*Up to 5 wafers when doing thermal ALD of oxides wafer size 100 mm, 150 mm and 200 mm
+*Smaller samples - Loaded on a 150 mm carrier plate or dummy wafer with an etched recess through the load lock
+*For deposition of thermal oxide up to five wafers can be loaded directly in the ALD chamber
 |-
 | style="background:LightGrey; color:black"|Allowed materials
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 *Silicon oxide, silicon nitride
 *Quartz/fused silica
-*Al, Al<sub>2</sub>O<sub>3</sub>
+*Al, aluminium oxide
-*Ti, TiO<sub>2</sub>
+*Ti, titanium oxide
-*Other metals (use dedicated carrier wafer)
+*Hf, hafnium oxide
-*III-V materials (use dedicated carrier wafer)
+*Metals - Use a dedicated carrier wafer
-*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
+*III-V materials - Use a dedicated carrier wafer
+*Polymers - Depending on the melting point/deposition temperature, use carrier wafer. Ask for permission
 |-
 |}