Specific Process Knowledge/Direct Structure Definition: Difference between revisions
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!Prerequisites | !Prerequisites | ||
|Sample with resist.<br> A glass mask with desired pattern. For mask layout software see [[Specific Process Knowledge/ | |Sample with resist.<br> A glass mask with desired pattern. For mask layout software see [[Specific Process Knowledge/Pattern Design| Mask design]] | ||
|Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used. | |Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used. | ||
|A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine. | |A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine. |
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Direct Structure Definiton
By direct structure definition we mean that you form the structures for you device directly in the material that the device consist of without any masking steps. Some of the techniques may require a master.
Choose method of structuring/equipment
- UV Lithography
- Nano Imprint Lithography
- Polymer Injection Molder
- Laser Micromachining Tool/ablation
- Dicing saw
Comparison of equipment/material
UV Lithography | Nano Imprint Lithography | Polymer Injection Molder | Laser Micromachining Tool | Dicing saw | |
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General description | The device is typical made in a thick film (10-100µm thick) of a polymer (SU-8) that is spun on a carrier (silicon wafer). This film is exposed through a mask and then developed and possible cured to make the polymer harder. | The device is typical made in a thick film (1-10µm thick) of a polymer that is spun on a carrier (silicon wafer). A master with the desired pattern is pressed into this film and the film is hardened by heating or UV-exposure. A residual layer has to be etched away by dry etching. It is possible to form very small 2½D structures over large areas relative fast. | The device is typically made in Topas, PP, PE, PS or a similar polymer. A master disk, called a shim, is usually fabricated in nickel or special aluminium alloys with the desired structures to be replicated. It is mounted in the tool of the injection moulding machine. Together they form a cavity into which molten polymer is injected. It is possible to replicate both small and large 2½D structures relatively fast. Many plastic items are made by injection molding, from toothbrushes and car bumpers to LEGO building blocks. | The device is made using a series of short, high intensity light pulses to engrave a pattern in almost any material. Since the light pulses are very short (100ns or 10ps) the heating of the sample can be minimized, and material can be removed without any further sample deformation/melting. | The dicing saw is mostly used to seperate a silicon/glass wafer into individual chips. It can however also be used to make straight channels in glass/fused silica for e.g. fluidic components. |
Typical used for | Optical waveguides, fluidic systems (master for PDMS/soft lithography) | ?? | Fluidic devices, optical waveguides, surface modification. | Cutting Silicon and glass wafers in odd shapes, shim cutting, shim patterning, surface modification, hole drilling in glass/silicon etc. | Cutting Silicon and glass wafers in rectangular shapes, making straight channels in glass wafers. |
Processable materials |
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Prerequisites | Sample with resist. A glass mask with desired pattern. For mask layout software see Mask design |
Sample with polymer. A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used. |
A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine. | A 2D CAD model file in DXF or CONX format. Clewin5 can convert GDS and CIF files to DXF format. | Number of lines and pitch in each direction. Your wafer. |
Throughput (when mask/stamp/pattern available) | medium: 5-10 wafers/hour depending on exposure time | medium: 5-10 wafers/hour depending on imprint time | fast: 10-200/hour | medium-slow: 0.1-1 wafers/hour depending on pattern complexity | medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s) |
Min/max featuresize | 1µm - wafer size | 100nm - µm | nm - mm | 100µm - wafer size | saw blade width 60µm or 200µm. Has to cut full diameter of wafer. |
Post-treatment | resist developing/baking | Dry Etch back (RIE), ?? Nano Imprint Lithography | Sprue/runner has to be broken or cut off. | Sample cleaning with Ultrasound etc. | None |
Patterning degree of freedom | 2D | 2D. different depths possible | 2D. Different depths possible. | 2D. different depths possible | 1D. different depths possible |
Sample sizes |
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Allowed materials | Depending on tool used | Nano Imprint Lithography | Nickel, aluminium, steel, FDTS | Almost any | Silicon, glass, GaN, bonded wafers, LiNbO3 |