Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions
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|Etch rate of LPCVD nitride | |Etch rate of LPCVD nitride | ||
|'''60-65 nm/min (20% etch load) (Feb. 2014)''' | |'''60-65 nm/min (20% etch load) (Feb. 2014)''' | ||
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|Selectivity to resist [SiN : AZ resist] | |Selectivity to resist [SiN : AZ resist] | ||
|'''1:0.75''' | |'''1:0.75''' | ||
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|Wafer uniformity (100mm) | |Wafer uniformity (100mm) | ||
|'''?''' | |'''?''' | ||
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|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
|? | |? | ||
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|Wafer uniformity map (click on the image to view a larger image) | |Wafer uniformity map (click on the image to view a larger image) | ||
|not measured | |not measured | ||
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|SEM profile images | |SEM profile images | ||
|Not measured | |Not measured | ||
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|Etch rate in Barc | |Etch rate in Barc | ||
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|~50 nm/min (Date: 2014-09-09) | |~50 nm/min (Date: 2014-09-09) | ||
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|Etch rate in KRF resist | |Etch rate in KRF resist | ||
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|~40 nm/min (Date: 2014-09-09) | |~40 nm/min (Date: 2014-09-09) | ||
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