Revision as of 17:04, 3 April 2008

The Molecular Vapor Deposition Tool

The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At Danchip the MVD is essential for nanoimprint lithography.

Processing on the MVD

The MVD coatings are created as self-assembled monolayers on a surface when a molecular vapor of chemials is present.

These chemicals, typically it is flourinated organosilanes, have a teflon-like tail consisting of -(CF₂)_xCF₃ and, in the other end, a reactive group -Si_(teflon)Cl_x. As shown in the figure below, the chlorine atoms react with -OH groups of the surface to form a chemical bond -Si(_(teflon))-O-Si_(surface)- under elimination of HCL. This means that both Si and SiO₂ surfaces are coated because of the native oxide on Si surfaces.

Some chemicals of the MVD and the surface reaction
Different chemicals for the MVD.
The chemical reaction in which the Cl atoms of the precursors are eliminated under formation of HCl.

The parameters of the MVD process

The most important parameters to control during the MVD process are:

Substrate surface: A O₂ plasma is run prior to any process in order to condition the substrate surface. This will also remove any existing MVD coating.

Water content: Water will cause the chemicals to polymerize (bond to each other instead of on the surface) and it is therefore critical to precisely control the water content.

Substrate temperature: The temperature of the substrate is the same as the process chamber and it is kept constant at 35 ^oC.

Vapor order: There is no active force that injects the chemicals into the process chamber. The driving force is a combination of two factors:

A pressure gradient The vapor pressure of the chemical (when stored at some temperature in the cylinder) compared to the pressure in the chamber.
A temperature gradient The chemical and the line that feeds the process chamber are kept at a higher temperature.

The FLAT recipe

The FLAT recipe is designed to coat non-structured wafers.

The flat recipe
O₂ plasma	Flow	200 sccm
	Power	250 Watts
	Time	300 seconds
Chemical # 1 (vapor order 1)	Name	FDTS
	Line no.	3
	Cycles	4
	Pressure	0.500 Torr
Chemical # 2 (vapor order 2)	Name	Water
	Line no.	1
	Cycles	1
	Pressure	18 Torr
Processing	Time	900 seconds
Purge	Cycles	5

@@ Line 27: / Line 27: @@
 ; Substrate temperature
-: The temperature of the substrate is the same as the process chamber and it is kept constant at 35 O<sup>o</sup>C.
+: The temperature of the substrate is the same as the process chamber and it is kept constant at 35 <sup>o</sup>C.
-; Chemical composition
+; Vapor order
-: The composition of chemicals.
+: There is no active force that injects the chemicals into the process chamber. The driving force is a combination of two factors:
+* '''A pressure gradient''' The vapor pressure of the chemical (when stored at some temperature in the cylinder) compared to the pressure in the chamber.
+* '''A temperature gradient''' The chemical and the line that feeds the process chamber are kept at a higher temperature.
+== The FLAT recipe ==
+The FLAT recipe is designed to coat non-structured wafers.