Specific Process Knowledge/Thin film deposition/Deposition of AZO: Difference between revisions
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| | |Depending on process parameters. | ||
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*1x6" wafer | |||
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* Silicon | * Silicon | ||
* Silicon oxide | * Silicon oxide | ||
* Silicon nitride | |||
* Silicon (oxy)nitride | * Silicon (oxy)nitride | ||
* Photoresist | * Photoresist | ||
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* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
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* Silicon | * Silicon | ||
Revision as of 13:30, 30 January 2017
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AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.
| Sputtering deposition (Lesker) | Atomic layer deposition (ALD Picosun R200) | |
|---|---|---|
| General description | Sputter deposition of AZO | Atomic layer deposition of AZO |
| Pre-clean | RF Ar clean | |
| Layer thickness | 10Å to 5000Å* | |
| Deposition rate | Depending on process parameters. | |
| Batch size |
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| Allowed materials |
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| Comment |
* For thicknesses above 200 nm permission is required.